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| SSM5H08TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H08TU DC-DC Converter * * Nch MOSFET and schottky diode combined in one package Low RDS (ON) and low VF Unit: mm Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10s Tch Rating 20 12 1.5 6.0 0.5 0.8 150 Unit V V A Drain power dissipation Channel temperature W C DIODE Absolute Maximum Ratings (Ta = 25C) SCHOTTKY Characteristics Maximum (peak) reverse voltage Reverse voltage Average forward current Peak one cycle surge forward current (non-repetitive) Junction temperature Symbol VRM VR IO IFSM Tj Rating 25 20 0.5 2 (50 Hz) 125 Unit V V A A C UFV JEDEC JEITA TOSHIBA 2-2R1A Weight: 7 mg (typ.) Absolute Maximum Ratings (Ta = 25C) MOSFET, DIODE COMMON Characteristics Storage temperature Operating temperature Symbol Tstg Topr (Note 3) Rating -55~125 -40~100 Unit C C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 t, Cu pad: 645 mm2) Note 2: Pulse width limited by max channel temperature Note 3: Operating temperature limited by max channel temperature and max junction temperature 1 2007-11-01 SSM5H08TU Marking Equivalent Circuit 5 4 5 4 KER 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2 2007-11-01 SSM5H08TU MOSFET Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain-Source breakdown voltage Drain Cut-off current Gate threshold voltage Forward transfer admittance Drain-Source on-resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS V (BR) DSX IDSS Vth |Yfs| RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = 12 V, VDS = 0 ID = 1 mA, VGS = 0 ID = 1 mA, VGS = -12 V VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 0.75 A ID = 0.75 A, VGS = 4 V ID = 0.75 A, VGS = 2.5 V (Note 4) (Note 4) (Note 4) Min 20 12 0.4 1.4 Typ. 2.8 140 180 125 17 42 15.5 8.5 Max 1 1 1.1 160 220 Unit A V A V S m pF pF pF ns VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, ID = 0.75 A VGS = 0~2.5 V, RG = 4.7 Note 4: Pulse measurement Switching Time Test Circuit (a) Test circuit 2.5 V 0 10 s OUT VDD = 10 V RG = 4.7 Duty < 1% = VIN: tr, tf < 5 ns Common source Ta = 25C (b) VIN 2.5 V 10% 90% IN RG 0V (c) VOUT VDD 90% 10% tr ton toff tf VDD VDS (ON) Precaution Vth can be expressed as voltage between gate and source when the low operating current value is ID = 100 A for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) Be sure to take this into consideration when using the device. 3 2007-11-01 SSM5H08TU Schottky Diode Electrical Characteristics (Ta = 25C) Characteristic Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2) IR CT IF = 0.3 A IF = 0.5 A VR = 20 V VR = 0 V, f = 1 MHz Test Condition Min Typ. 0.38 0.43 46 Max 0.45 50 Unit V V A pF Precaution The schottky barrier diodes of this product have large-reverse-current-leakage characteristics compared to other switching diodes. This current leakage and improper operating temperature or voltage may cause thermal runaway resulting in breakdown. Take forward and reverse loss into consideration in radiation design and safety design. 4 2007-11-01 SSM5H08TU MOS Electrical Characteristics Graph I D - V D S (MO S FET) 3.0 I D - V G S (MO S FET) 10000 4.0V 2.5 2.5V Common Source Ta=25 1000 Common Source VDS =3V Drain current I D (mA) Drain current I D (mA) 2.0 2.0V 100 Ta=85 10 25 1.5 VGS =1.8V 1.0 1 -25 0.5 0.1 0.0 0.0 0.5 1.0 Drain-Source voltage V DS (V) 1.5 2.0 0.01 0 1 2 Gate-Source voltage V GS (V) 3 4 R D S (O N) - ID (MO S FET ) 500 R D S(O N) - V G S (MO S FET ) 0.5 Common Source Ta=25 400 Drain-Source on resistance Common Source I D=0.75A 0.4 Drain-Source on resistance R DS(ON) (m) RDS(ON) () 300 0.3 200 2.5V 0.2 25 Ta=85 100 VGS =4.0V 0.1 -25 0 0 0.5 1 1.5 2 2.5 Drain current I D (A) 0 0 2 4 Gate-Source voltage V GS (V) 6 8 R D S(O N) - T a (MO S FET ) 0.5 V th - Ta (MO S FET ) 2 Common Source I D=0.75A 0.4 Drain-Source on resistance 1.8 1.6 1.4 Gate threshold voltage Vth(V) Common Source I D=0.1mA VDS =3V RDS(ON) () 0.3 1.2 1 0.8 0.6 0.4 0.2 0.2 2.5V 0.1 4.0V 0 -25 0 25 50 75 100 0 -25 0 25 50 75 100 Ambient temperture Ta () Ambient temperture Ta () 5 2007-11-01 SSM5H08TU |Yfs| - I D (MO S FET) 100 1000 C - V D S (MO S FET) Common Source VDS =3V Ta=25 Forward transfer admittance |Yfs| (mS) 10 Capacitance C (pF) 100 C iss 1 C oss C rss 10 0.1 Common Source VGS =0V f=1MHz Ta=25 1 0.01 0.1 Drain current ID (A) 1 10 0.1 1 10 100 Drain-Source voltage V DS (V) 0.01 0.001 I D R - V D S (MO S FET) 4 3.5 Drain reverse current I DR (mA) 3 2.5 2 1.5 1 0.5 0 0 -0.2 -0.4 -0.6 -0.8 -1 Drain-Source voltage V DS (V) t - I D (MO S FET) 1000 Common Source VGS =0 Ta=25 Switching time t (ns) toff 100 Common Source VDD=10V VGS =02.5V Ta=25 tf ton 10 tr 1 0.1 0.01 0.1 Drain current I D (A) 1 10 Dyn a mic In p u t Ch ara cteristic (MO S FET ) 10 PD - Ta (MOSFET) 1.2 8 Gate-Source voltage V GS (V) I D=1.5A Ta=25 Drain power dissipation PD (W) Common Source VDD=10V Mounted on FR4 board 1 t = 10 s 0.8 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm2) 6 0.6 DC 4 0.4 2 0.2 0 0 0.5 1 1.5 2 2.5 3 3.5 0 0 50 100 150 Tatal gate charge Q g (nC) Ambient temperature Ta (C) 6 2007-11-01 SSM5H08TU S a fe o p era tin g area (MO S FET ) 10 I D max (Pulsed) * 1ms 1 Drain current I D (A) I D max (Continuous) 10ms 100ms DC operation Ta=25 0.1 Mounted on FR4 board (25.4 mm 25.4 mm 1.6 t Cu pad: 645 mm2 ) 0.01 *:Single nonrepetive Pulse Ta 25C Curves must be derated linealy with increase in temperture. 0.001 0.1 1 10 100 Drain-Source voltage V DS (V) 7 2007-11-01 SSM5H08TU SBD Electrical Characteristics Graph IF - VF (SBD) 1000 125 10 IR - VR (SBD) (mA) (mA) 100 1 75 50 Reverse current IR Forward current IF 100 100 75 0.1 50 10 Ta = 25C 0.01 Ta = 25C 0 1 0 Pulse measurement 0.001 0 5 0.1 0.2 0.3 0.4 0.5 0.6 0.7 10 15 20 Forward voltage VF (V) Reverse voltage VR (V) Transient thermal impedance rth (C/W) rth - tw (SBD) 1000 3000 1000 CT - VR (SBD) f = 1 MHz Ta = 25C 100 10 Total capacitance CT (pF) 1 0.001 Single pulse Mounted on FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm ) 00.1 0.1 1 10 100 1000 100 Pulse width tw (s) 10 1 0.01 0.1 1 10 100 Reverse voltage VR (V) 8 2007-11-01 SSM5H08TU Transient Thermal Impedance Graph rth - tw (MOSFET) rth (C/W ) 1000 Single pulse Mounted on FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm ) Transient thermal impedance 100 10 1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) rth (C/W) rth - tw (SBD) 1000 Transient thermal impedance 100 10 1 0.001 Single pulse Mounted on FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm ) 0.01 0.1 1 10 100 1000 Pulse width tw (s) 9 2007-11-01 SSM5H08TU RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN GENERAL * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 10 2007-11-01 |
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